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Post-Conference Seminar:

GaN Transistors for Efficient Power Conversion

Presented by: Alex Lidow, CEO, EPC Corporation and David Reusch, Director of Applications, EPC Corporation

Date: Thursday, September 25, 2014
Time: 2:00 - 5:00 p.m.
Location: Greater Richmond Convention Center
Fee: $50 with DES registration; $295 for seminar only

Abstract

Gallium Nitride is beginning to be broadly accepted in many power conversion and RF applications. The technology is rapidly developing and product experience in the field is expanding. This seminar will begin with Alex Lidow explaining how GaN High Electron Mobility Transistors (HEMT) work followed by an update on the state-of-the art in the technology from the many new entrants into this field. Included in this update will be the latest manufacturing technologies, cost requirements and comparisons, reliability data and acceleration factors.

David Reusch will follow with a tutorial on how to use these high performance devices. They will start with drivers, layout, and thermal considerations for high performance and high frequency power conversion, and then move to several applications examples including high frequency Envelope Tracking (ET), Class-D Audio, RF amplifiers, DC-DC converters, and Wireless Power Transmission.

The seminar concludes with a look into future of the relatively young technology.

Register for both DES and this seminar (please click the check-box listed under "Available Options" before clicking the "Add to Cart" button).
Register for the seminar only. For questions or more information please contact Traci Shepard.

Outline

I. Introduction (5 min): Alex Lidow

II. How GaN works (15 min): Alex Lidow

  • Overview of HEMT transistors (both depletion and enhancement mode)
  • Cross sections of devices
  • Key electrical characteristics and why they are important

III. Where is the state-of-the-art today? (15 min): Alex Lidow

  • Performance in terms of BV, RDS(ON), Power Conversion Efficiency, IC developments
  • Manufacturing Technology
    • How we build these devices
    • What are the costs and how do they compare against MOSFETs and IGBTs

IV. Design Basics – Drivers, layout, multi-megahertz switching, thermal considerations, (45 min): David Reusch

  • Layout techniques for high frequency, multi-megahertz switching
  • Thermal design and thermal modeling techniques

V. Break (15 min)

VI. Design Examples (60 min): David Reusch

  • Envelope Tracking
  • Wireless Power
  • Resonant DC-DC converters
  • Class D Audio
  • RF Amplifiers

VII. A Look into the Future (10 min): Alex Lidow

VIII. Questions and Answers (10 min)

Speaker Biographies

Alex Lidow, CEO, EPC Corporation

Prior to founding EPC, Dr. Lidow was CEO of International Rectifier Corporation. A co-inventor of the HEXFET power MOSFET, Dr. Lidow holds many patents in power semiconductor technology and has authored numerous publications on related subjects. Lidow earned his Bachelor of Science degree from Caltech in 1975 and his Ph.D. from Stanford in 1977.

David Reusch, Director of Applications, EPC Corporation

Dr. Reusch earned a doctorate in electrical engineering from Virginia Tech, where he also earned his bachelor’s and master’s degrees. While working on his Ph.D. he was a Bradley Fellow at the Center for Power Electronics Systems (CPES). Dr. Reusch has first-hand experience designing with GaN transistors to meet the demands for lower loss and higher power density in power converters. He is active in IEEE organizations and during the last several years has published papers at APEC and ECCE conferences.

Register for both DES and this seminar (please click the check-box listed under "Available Options" before clicking the "Add to Cart" button).
Register for the seminar only. For questions or more information please contact Traci Shepard.

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